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PROVISIONAL
PD - 97002
SMPS MOSFET
HEXFET(R) Power MOSFET
Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free
l
IRFB52N15DPbF IRFS52N15DPBF IRFSL52N15DPbF
Key Parameters
VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 150 200 32 175 V V m: C
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
TO-220AB IRFB52N15DPbF
D2Pak TO-262 IRFS52N15DPBF IRFSL52N15DPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
51* 36* 240 3.8 230* 1.5* 30 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient
Typ.
--- 0.50 --- ---
Max.
0.47* --- 62 40
Units
C/W
* RJC (end of life) for D2Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium. Notes through are on page 11
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PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.16 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 32 m VGS = 10V, ID = 36A 5.0 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 19 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 60 18 28 16 47 28 25 2770 590 110 3940 260 550 Max. Units Conditions --- S VDS = 50V, ID = 36A 89 ID = 36A 27 nC VDS = 75V 42 VGS = 10V, --- VDD = 75V --- ID = 36A ns --- R G = 2.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter EAS IAR EAR VDS (Avalanche) Single Pulse Avalanche Energydh Avalanche CurrentA Min. --- --- --- 200
Min. Typ. Max. Units
Typ. --- --- 450 ---
Max. 470 36 --- ---
Units mJ A mJ V
Repetitive Avalanche Voltage
Repetitive Avalanche Energy
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol 60 --- --- showing the A G integral reverse --- --- 240 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 36A, VGS = 0V --- 140 210 nS TJ = 25C, IF = 36A --- 780 1170 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1000
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
10
10
5.0V
1
5.0V 300s PULSE WIDTH Tj = 25C
1
0.1 0.1 1
300s PULSE WIDTH Tj = 175C
0.1 0.1 1 10 100
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.0
I D = 60A
ID, Drain-to-Source Current ()
2.5
100.00
RDS(on) , Drain-to-Source On Resistance
(Normalized)
T J = 175C
2.0
1.5
10.00
T J = 25C
1.0
1.00 5.0 7.0 9.0
VDS = 15V 300s PULSE WIDTH
11.0 13.0 15.0
0.5
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
12 10 8 6 4 2 0
ID = 36A VDS = 120V VDS = 75V
10000
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10 1 10 100 1000
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00
T J = 175C
ID , Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100 100sec 10 1msec
10.00 T J = 25C 1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V)
1 Tc = 25C Tj = 175C Single Pulse 1 10 100
10msec
0.1
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
70
V DS
60
RD
VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
50
-VDD
I D , Drain Current (A)
40
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50
0.1
0.20 0.10
Thermal Response
0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1 / t 2 +TC 1
J = P DM x Z thJC
0.001 0.00001
0.0001
0.001
0.01
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
15V
900
TOP
VDS L
DRIVER
720
BOTTOM
ID 15A 26A 36A
RG
20V
D.U.T
IAS tp
+ V - DD
EAS , Single Pulse Avalanche Energy (mJ)
540
A
0.01
360
Fig 12a. Unclamped Inductive Test Circuit
180
V(BR)DSS tp
0 25 50 75 100 125 150 175
Starting Tj, Junction Temperature
( C)
I AS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A Ir)AAQAAvhriyAyvrAvv vqvphrAAGrhqAAArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S 96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
8
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IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ A$"T
Q6SUAIVH7@S 96U@A8P9@ QA2A9@TDBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G @6SAA2A! X@@FA! 6A2A6TT@H7GATDU@A8P9@
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PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPBF/IRFSL52N15DPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT 1- GATE
TO-262 Part Marking Information
@Y6HQG@) UCDTADTA6IADSG" "G GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G @6SA&A2A ((& X@@FA ( 6A2A6TT@H7GATDU@A8P9@
10
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D2Pak Tape & Reel Information
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
Notes:
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
1% Duty cycle, 100 pulses, limited by
Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25C, L = 0.72mH This is only applied to TO-220AB package. RG = 25, IAS = 36A. This is applied to D2Pak, when mounted on 1" square PCB ISD 36A, di/dt 400A/s, VDD V(BR)DSS, (FR-4 or G-10 Material ). For recommended footprint and soldering TJ 175C. techniques refer to application note #AN-994. Pulse width 300s; duty cycle 2%.
TO-220 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] (IRFB52N15DPbF), & Industrial (IRFS52N15DPBF/IRFSL52N15DPbF) market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/05
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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